Contribution to the Study of Sub-Bandgap Photon Absorption in Quantum Dot InAs/AlGaAs Intermediate Band Solar Cells

Intermediate band solar cells (IBSCs) pursue the increase in efficiency by absorbing below-bandgap energy photons while preserving output voltage. Experimental IBSCs based on quantum dots (QDs) have already demonstrated that both photon absorption and voltage preservation are possible. However, experimental work has also revealed of light is weak insufficient to boost cells. The objective this article contribute study manufacturing characterizing a QD IBSC with single layer without trapping elements. Using 1-D substrate texturing, our results show three-fold lowest region spectrum, not previously explored using approach. Furthermore, we measure, at 9K, distinguished split quasi-Fermi levels between conduction intermediate bands, which necessary condition preserve cell.